·With TO-3 package ·High breakdown voltage APPLICATIONS ·For CRT horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collecto.
1000 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.4A 2.0 V ICBO Collector cut-off current VCB=800V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V;IC=0 10 µA hFE DC current gain IC=2 A ; VCE=5V 4 20 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE 2SC1046 Fig.2 Outline dimensions 3 .
·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1044 |
Renesas |
NPN Transistor | |
2 | 2SC1047 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SC1047 |
Wing Shing Computer Components |
Silicon Transistor | |
4 | 2SC1047 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SC1000 |
Toshiba |
Silicon NPN Transistor | |
6 | 2SC1000 |
ETC |
Silicon NPN Transistor | |
7 | 2SC1001 |
Toshiba |
SILICON NPN TRANSISTOR | |
8 | 2SC1002 |
SavantIC |
Silicon NPN Power Transistors | |
9 | 2SC1004 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC1004 |
INCHANGE |
NPN Transistor | |
11 | 2SC1008 |
INCHANGE |
NPN Transistor | |
12 | 2SC1008 |
TRANSYS Electronics Limited |
Transistors |