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·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Universal high current switching as solenoid driving, high speed inverter and converter. ABSOLUTE MAXIMU.
er Breakdown Voltage IC= -1mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -40V ; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -5A; VCE= -2V hFE-1 Classifications Q R S 70-140 100-200 140-280 2SB827 MIN TYP. MAX UNIT -50 V -60 V -6 V -0.4 V -0.1 mA -0.1 mA 70 280 30 NOTICE： ISC reserves the rights to make ch.
2SB827 - Sanyo Semicon Device
Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Appli.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB821 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB822 |
Rohm |
Medium power Transistor |
|
| 3 | 2SB823 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB824 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB824 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB824 |
UTC |
PNP SILICON TRANSISTOR |
|
| 7 | 2SB824 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB825 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SB825 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB826 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SB826 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB826 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|