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Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit: mm) (96.
1) Low VCE(sat). VCE(sat) =
*0.5V (Typ.) (IC / IB =
*2A /
*0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit: mm)
(96-131-B24)
215
Transistors
FAbsolute maximum ratings (Ta = 25_C)
2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M
FElectrical characteristics (Ta = 25_C)
216
Transistors
FPackaging specifications and hFE
2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M
hFE values are classified as follows :
FElectrical characteristic curves
217.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB821 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB823 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB824 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SB824 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB824 |
UTC |
PNP SILICON TRANSISTOR |
|
| 6 | 2SB824 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB825 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SB825 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB826 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SB826 |
INCHANGE |
PNP Transistor |
|
| 11 | 2SB826 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SB827 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Tranasistors |
|