·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD985 2SD986 APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB794 2SB795 Absolute maximum ratings(Ta=25 ) SYMBOL PARAME.
TER 2SB794 IC=-10mA ;IB=0 2SB795 VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB794 2SB795 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-60V; IE=0 -80 CONDITIONS 2SB794 2SB795 SYMBOL MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -1.5 -2.0 V V ICBO Collector cut-off current -1.0 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-1A ; VCE=-2V 1000 2000 30000 -2.0 µA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.0A ; IB1=-IB2=-1.
·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) · Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB790 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
2 | 2SB791 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
3 | 2SB791 |
INCHANGE |
PNP Transistor | |
4 | 2SB791K |
Hitachi Semiconductor |
Silicon PNP Transistor | |
5 | 2SB792 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
6 | 2SB792 |
Kexin |
Transistor | |
7 | 2SB792A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
8 | 2SB792A |
Kexin |
Transistor | |
9 | 2SB792A |
TY Semiconductor |
Transistor | |
10 | 2SB793 |
ETC |
Si PNP Transistor | |
11 | 2SB793A |
ETC |
Si PNP Transistor | |
12 | 2SB794 |
SavantIC |
(2SB794 / 2SB795) SILICON POWER TRANSISTOR |