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2SB795 |
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| Part Number | 2SB795 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) · Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.) @IC= -1A ·Built-in a dumper diode at C-E ·Complement to Type 2SD986 ·Minimum Lo... |
| Features |
HANGE Semiconductor
2SB795
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBO L
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -1mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE -1 DC Current Gain
IC= -0.5A ; VCE= -2V
hFE -2 DC Current Gain
IC= -1A ; VCE= -2V
MIN
TYP MAX UNIT
-1.5
V
-2.0
V
-1.0
uA
-1.0 mA
1000
2000
30000
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -1A; IB1= -IB2=... |
| Document |
 2SB795 Data Sheet
PDF 185.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB790 |
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| 2 | 2SB791 |
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| 3 | 2SB791 |
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| 4 | 2SB791K |
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| 5 | 2SB792 |
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