2SB765 - INCHANGE

2SB765 PNP Transistor

·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applicati.

Features

PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A, IB= -3mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A, IB= -30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A, IB= -3mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A, IB= -30mA ICBO Collector Cutoff Current VCB= -120V, IE= 0 ICEO Collector Cutoff Current VCE= -100V, RBE= ∞ hFE DC Current Gain IC= -1.5A; VCE= -3V 2SB765 MIN TYP. MAX UNIT -120 V -7 V.