2SB760 - INCHANGE

2SB760 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba.

Features

r Saturation Voltage IC= -1A; IB= -0.125A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICEO Collector Cutoff Current VCE= -60V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.2A; VCE= -4V hFE-2 DC Current Gain IC= -1A; VCE= -4V  hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB760 MIN TYP. MAX UNIT -60 V -1.0 V -1.3 V -300 μA -1 mA 40 250 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for .