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2SB760 |
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| Part Number | 2SB760 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
r Saturation Voltage IC= -1A; IB= -0.125A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.2A; VCE= -4V
hFE-2
DC Current Gain
IC= -1A; VCE= -4V
hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB760 MIN TYP. MAX UNIT -60 V -1.0 V -1.3 V -300 μA -1 mA 40 250 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for ... |
| Document |
 2SB760 Data Sheet
PDF 213.08KB |
| Distributor | Stock | Price | Buy |
|---|
