2SB719 - INCHANGE

2SB719 PNP Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD759 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN.

Features

V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -3.0V; IC=0 hFE DC Current Gain IC= -150mA; VCE= -5V fT Current-Gain—Bandwidth Product IC= -100mA; VCE= -10V MIN TYP. MAX UNIT -160 V -160 V -5 V -1.0 V -1.5 V -10 μA -10 μA 35 200 100 MHz  hFE Classifications A B C 35-70 60-120.