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·With TO-3PN package ·Wide area of safe operation ·Excellent good linearity of hFE APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base v.
current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-7A; IB=-0.7A IC=-7A;VCE=-5V VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 40 15 7 220 MIN TYP. 2SB713 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 MHz pF hFE-2 Classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB.
2SB713 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB710 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB710 |
Kexin |
PNP Transistors |
|
| 3 | 2SB715 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SB716 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SB716 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 6 | 2SB716A |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 7 | 2SB717 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SB718 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SB719 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB703 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB703 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB705 |
INCHANGE |
PNP Transistor |
|