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2SB682 |
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| Part Number | 2SB682 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
kdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
MIN TYP. MAX UNIT
-100
V
-5
V
-1.7
V
-1.5
V
-30 μA
-0.1 mA
-0.1 mA
55
300
15
hFE-1 Classifications C D E 55-110 90-180 150-300 NOTICE： ISC reserves the rights to make changes of the content ... |
| Document |
 2SB682 Data Sheet
PDF 214.36KB |
| Distributor | Stock | Price | Buy |
|---|
