·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -90V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max.) @IC= -3A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.
A; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -220V; IE= 0 ICEO Collector Cutoff Current VCE= -90V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -4A; VCE= -1.5V hFEClassifications A B C D 14-100 20-130 25-130 30-130 2SB468 MIN TYP. MAX UNIT -90 V -5 V -220 V -0.4 V -1.0 V -10 μA -100 μA -10 μ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB407 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SB407 |
INCHANGE |
PNP Transistor | |
3 | 2SB434 |
INCHANGE |
PNP Transistor | |
4 | 2SB434 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SB435 |
INCHANGE |
PNP Transistor | |
6 | 2SB449 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB449 |
INCHANGE |
PNP Transistor | |
8 | 2SB474 |
Sanyo |
Audio Frequency High Power Amplifier | |
9 | 2SB476 |
ETC |
Ge PNP Alloy Junction Transistor | |
10 | 2SB481 |
ETC |
Ge PNP Alloy Junction Transistor | |
11 | 2SB48U9 |
Reliability |
1 and 2 Watt SB Series DC/DC Converters | |
12 | 2SB48U9 |
Reliability |
1 and 2 Watt SB Series DC/DC Converters |