2SB435 - INCHANGE

2SB435 PNP Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max.) @IC= -1A ·Complement to Type 2SD235 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

Features

r-Emitter Sustaining Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.05A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE1 DC Current Gain IC= -0.5A; VCE= -5V hFE2 DC Current Gain IC= -2.5A; VCE= -5V COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz fT Current-Gain—Bandwidth Product hFE-1 Classifications R O Y IC=-0.5A ; VCE= -5V MIN TYP. MAX UNIT -40 V -5 V -1.0 V -0.9.