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·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.
ied SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -25mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.1A VCE(sat)-4 Collector-Emitter Saturation Voltage IC= -3A; IB= -75mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -50mA ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -50.
2SB1657 - NEC
DATA SHEET SILICON TRANSISTOR 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES.
2SB1657 - SavantIC
·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1653 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1655 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1655 |
SavantIC |
PNP Transistor |
|
| 4 | 2SB1658 |
NEC |
Silicon PNP Transistor |
|
| 5 | 2SB1658 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1658 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1658 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 8 | 2SB1658 |
SeCoS |
PNP Transistor |
|
| 9 | 2SB1658 |
JCET |
PNP Transistor |
|
| 10 | 2SB1659 |
Sanken electric |
Silicon PNP Transistor |
|
| 11 | 2SB1602 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 12 | 2SB1603 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|