2SB1657 INCHANGE PNP Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SB1657

INCHANGE
2SB1657
2SB1657 2SB1657
zoom Click to view a larger image
Part Number 2SB1657
Manufacturer INCHANGE
Description ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -0.5A ·Minimum Lot-to-Lot variations for robust device pe...
Features ied SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -25mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.1A VCE(sat)-4 Collector-Emitter Saturation Voltage IC= -3A; IB= -75mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -50mA ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -50...

Document Datasheet 2SB1657 Data Sheet
PDF 205.75KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SB1653
Panasonic Semiconductor
Silicon PNP Transistor Datasheet
2 2SB1655
INCHANGE
PNP Transistor Datasheet
3 2SB1655
SavantIC
PNP Transistor Datasheet
4 2SB1657
NEC
Silicon PNP Transistor Datasheet
5 2SB1657
SavantIC
SILICON POWER TRANSISTOR Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact