2SB1531 - Inchange Semiconductor

2SB1531 Silicon PNP Power Transistor

·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll.

Features

reakdown Voltage IC= -30mA; IB= 0 -130 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -5mA -3.0 V ICBO Collector Cutoff Current VCB= -130V; IE= 0 -100 μA ICEO Collector Cutoff Current VCE= -130V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 2000 hFE-2 DC Current Gain IC= -5A; VCE= -5V 5000 30000 fT Current-Gain—Bandwidth Product  hFE-2 Classifications Q P IC= -0.5A; VCE= -10V 20 MHz 5000-15000 8000-30000 NOTICE： ISC.