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Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2255 s Features q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V 20.0±0.3 19.0±0.3 15.0±0.2 4.0±0.1 15.0±0.5 13.0±0.5 10.5±0.5 Unit: mm 4.5.
q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <
–2.5V
20.0±0.3 19.0±0.3 15.0±0.2
4.0±0.1
15.0±0.5 13.0±0.5 10.5±0.5
Unit: mm
4.5±0.2 2.0±0.1
4.0±0.1
φ3.2±0.1
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–160
–140
–5
–12
–7 70 2.5
Junction temperat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1490 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1490 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1490 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1492 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SB1492 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1494 |
Hitachi Semiconductor |
Silicon PNP Triple Diffused Type Transistor |
|
| 7 | 2SB1495 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 8 | 2SB1495 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1495 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1499 |
Panasonic |
Silicon PNP epitaxial planar type Power Transistors |
|
| 11 | 2SB1499A |
Panasonic |
Silicon PNP epitaxial planar type Power Transistors |
|
| 12 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|