Power Transistors 2SB1490 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2250 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Di.
q q q
Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): <
–2.5V
1.5
2.0
4.0
1.5
Solder Dip
s
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings
–160
–140
–5
–12
–7 90 3.5 150
–55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperatur.
·With TO-3PL package ·Complement to type 2SD2250 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APP.
·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Comp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1492 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1492 |
INCHANGE |
PNP Transistor | |
3 | 2SB1493 |
Panasonic |
PNP Transistor | |
4 | 2SB1494 |
Hitachi Semiconductor |
Silicon PNP Triple Diffused Type Transistor | |
5 | 2SB1495 |
Toshiba Semiconductor |
TRANSISTOR | |
6 | 2SB1495 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB1495 |
INCHANGE |
PNP Transistor | |
8 | 2SB1499 |
Panasonic |
Silicon PNP epitaxial planar type Power Transistors | |
9 | 2SB1499A |
Panasonic |
Silicon PNP epitaxial planar type Power Transistors | |
10 | 2SB1400 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
11 | 2SB1400 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1400 |
INCHANGE |
PNP Transistor |