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·With TO-3PL package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·For low frequency and high power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMET.
oltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-8A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V 20 60 20 MIN -160 2SB1419 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 TYP. MAX UNIT V -1.8 -1.8 -50 -50 V V µA µA 200 hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1419 Fig.2 Outline di.
2SB1419 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1411 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1411 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1411 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1412 |
Rohm |
Low Frequency Transistor |
|
| 5 | 2SB1412 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2SB1412 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SB1412 |
Weitron Technology |
PNP Transistor |
|
| 8 | 2SB1412 |
UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR |
|
| 9 | 2SB1412 |
Kexin |
Low Frequency Transistor |
|
| 10 | 2SB1412 |
SeCoS |
PNP Silicon Transistor |
|
| 11 | 2SB1414 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 12 | 2SB1416 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|