Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 ■ Features • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • High transition frequency fT • Allowing automatic insertion with radial taping 10.8±.
• Excellent current IC characteristics of forward current transfer ratio hFE vs. collector
• High transition frequency fT
• Allowing automatic insertion with radial taping
10.8±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1411 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1411 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1411 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1412 |
Rohm |
Low Frequency Transistor |
|
| 5 | 2SB1412 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2SB1412 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SB1412 |
Weitron Technology |
PNP Transistor |
|
| 8 | 2SB1412 |
UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR |
|
| 9 | 2SB1412 |
Kexin |
Low Frequency Transistor |
|
| 10 | 2SB1412 |
SeCoS |
PNP Silicon Transistor |
|
| 11 | 2SB1416 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 12 | 2SB1417 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|