2SB1418A - Panasonic Semiconductor

2SB1418A Silicon PNP epitaxial planar type Darlington

Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.0±0.2 4.2±0.2 Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –.

Features

q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings
  –60
  –80
  –60
  –80
  –5
  –4
  –2 15 2.0 150
  –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 emitter voltage 2SB1418A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temper.