Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolut.
q q q
Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings
–60
–80
–60
–80
–6
–5
–3 15 2.0 150
–55 to +150
Unit V
2.5±0.2
s Absolute Maximum Ratings
13.0±0.2 4.2±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C)
5.0±0.1 10.0±0.2 1.0
90°
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
emitter voltage 2SB1417A Emitter to base voltage Peak collecto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1411 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1411 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SB1411 |
INCHANGE |
PNP Transistor | |
4 | 2SB1412 |
Rohm |
Low Frequency Transistor | |
5 | 2SB1412 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
6 | 2SB1412 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
7 | 2SB1412 |
Weitron Technology |
PNP Transistor | |
8 | 2SB1412 |
UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR | |
9 | 2SB1412 |
Kexin |
Low Frequency Transistor | |
10 | 2SB1412 |
SeCoS |
PNP Silicon Transistor | |
11 | 2SB1414 |
Panasonic |
Silicon PNP epitaxial planar type Transistor | |
12 | 2SB1416 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |