2SB1353 - INCHANGE

2SB1353 Silicon PNP Power Transistor

·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage.

Features

eakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Cain IC= -0.1A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -5V  hFE Classifications D E F 60-120 100-200 160-320 2SB1353 MIN TYP. MAX UNIT -120 V -120 V -5 V -2.0 V -10 μA -10 μA 60 320 50 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at a.