2SB1351 - Sanken electric

2SB1351 Silicon PNP Transistor

(2 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1351 –60 –60 –6 –12(Pulse–20) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1351 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Condition VCB=–60V VEB=–6V IC=–10mA VCE=–4V, IC=–10A IC=–10A, IB=–20mA IC=–.

Features

6typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C
  – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V )
  –20 0m V CE ( sat )
  – I B Characteristics (Typical)
  –3 I C
  – V BE Temperature Characteristics (Typical)
  –20 (V C E =
  –4V)
  –6m A A
  –1
  –4 m A
  –3 mA Collector Current I C (A)
  –15
  –2m A Collector Current I C (A)
  –15
  –2 emp eT se T ˚C ( 25˚C 125
  –5
  –5 0 0
  –1
  –2
  –3
  –4
  –5
  –6 0
  –0.1
  –1
  –10
  –100 0 0
  –1 Base-Emittor Voltage V B E (V)
  –30˚C (Cas
  –1A (Ca
  –1
  –5A e Te Cas mp) I.