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·With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Colle.
rent Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-3A ;IB=-6mA VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 2000 MIN -120 -120 2SB1339 SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V -1.5 -100 -3.0 20000 12 70 V µA mA MHz pF 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1339 Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 .
2SB1339 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -2A).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1330 |
Rohm |
TRANSISTORS |
|
| 2 | 2SB1331 |
Rohm |
TRANSISTORS |
|
| 3 | 2SB1332 |
Rohm |
TRANSISTORS |
|
| 4 | 2SB1333A |
Rohm |
TRANSISTORS |
|
| 5 | 2SB1334 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1334 |
Rohm |
Epitaxial Planar PNP Silicon Transistor |
|
| 7 | 2SB1334 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB1334A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1335 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1335 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1300 |
NEC |
PNP SILICON TRANSISTOR |
|
| 12 | 2SB1301 |
Renesas |
PNP SIlicon Transistor |
|