·With TO-220 package ·Wide area of safe operation ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg .
ltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ,IB=0 IC=-50µA ,IE=0 IE=-50µA ,IC=0 IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IE=0.5A ; VCE=-5V 60 MIN -80 -80 -5 2SB1334A SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V -1.5 -1.5 -10 -10 320 100 12 V V µA µA pF MHz hFE Classifications D 60-120 E 100-200 F .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1334 |
INCHANGE |
PNP Transistor | |
2 | 2SB1334 |
Rohm |
Epitaxial Planar PNP Silicon Transistor | |
3 | 2SB1334 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1330 |
Rohm |
TRANSISTORS | |
5 | 2SB1331 |
Rohm |
TRANSISTORS | |
6 | 2SB1332 |
Rohm |
TRANSISTORS | |
7 | 2SB1333A |
Rohm |
TRANSISTORS | |
8 | 2SB1335 |
INCHANGE |
PNP Transistor | |
9 | 2SB1335 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SB1339 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SB1339 |
INCHANGE |
PNP Transistor | |
12 | 2SB1300 |
NEC |
PNP SILICON TRANSISTOR |