2SB1294 - INCHANGE

2SB1294 PNP Transistor

·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1897 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

Features

B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -5V  hFE Classifications D E F 60-120 100-200 160-320 2SB1294 MIN TYP. MAX UNIT -100 V -100 V -5 V -1.0 V -1.5 V -10 μA -10 μA 60 320 NOTICE： ISC reserves the rights to make changes of the .