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·With TO-220C package ·Low collector saturation voltage ·Complement to type 2SD1896 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO .
age Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IE=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 60 MIN -100 -100 -5 2SB1293 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V V -1.0 -1.5 -10 -10 320 12 120 V V µA µA MHz pF hFE Cla.
2SB1293 - INCHANGE
·High Collector Current:: IC= -5A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -3A ·Wide Area of Safe Op.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1290 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 2 | 2SB1290 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB1290 |
ROHM |
PNP Transistor |
|
| 4 | 2SB1291 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB1291 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1292 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1292 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1294 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1294 |
Rohm |
Epitaxial Planar PNP Silicon Transistor |
|
| 10 | 2SB1294 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1295 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SB1295 |
Kexin |
PNP Epitaxial Planar Silicon Transistors |
|