Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAbsolute maximum ratings (Ta = 25_C) FElectrical characterist.
1) Low VCE(sat). VCE(sat) =
*0.2V (Typ.) (IC / IB =
*0.5A /
*50mA) 2) High breakdown voltage. BVCEO =
*80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm)
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
(96-136-B93)
229
Transistors
FPackaging specifications and hFE hFE values are classified as follows :
2SB1198K
FElectrical characteristic curves
230
Transistors
2SB1198K
231
.
The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1190 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SB1190 |
INCHANGE |
PNP Transistor | |
3 | 2SB1192 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1192 |
INCHANGE |
PNP Transistor | |
5 | 2SB1193 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SB1193 |
Panasonic |
Silicon PNP Transistor | |
7 | 2SB1193 |
INCHANGE |
PNP Transistor | |
8 | 2SB1194 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1194 |
INCHANGE |
PNP Transistor | |
10 | 2SB1197 |
WEITRON |
PNP Transistor | |
11 | 2SB1197 |
GME |
Silicon Epitaxial Planar Transistor | |
12 | 2SB1197 |
MCC |
PNP Transistor |