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Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 ■ Features 7.5±0.2 φ 3.1±0.1 4.2±0.2 For midium-speed power switching Complementary to 2SD1773 0.7±0.1 10.0±0.2 5.5±0.2 .
7.5±0.2
φ 3.1±0.1
4.2±0.2
For midium-speed power switching Complementary to 2SD1773
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −120 −120 −7 −8 −12 50 2 150 −55 ∼ +150 °C °C Unit V V V A A W
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2
–0.1
14.0±0.5
0.8±0.1
2.54±0..
2SB1193 - INCHANGE
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -.
2SB1193 - SavantIC
·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1773 APPLICATIONS .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1190 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SB1190 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1192 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1192 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1194 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1194 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1197 |
WEITRON |
PNP Transistor |
|
| 8 | 2SB1197 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 9 | 2SB1197 |
MCC |
PNP Transistor |
|
| 10 | 2SB1197 |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor |
|
| 11 | 2SB1197 |
SeCoS |
PNP Transistor |
|
| 12 | 2SB1197 |
Jin Yu Semiconductor |
TRANSISTOR |
|