Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES The 2SB1182DX is designed for medium power amplifier application 9. 70Ć0. 20 0. 75Ć0. 10 5. 30Ć0. 10 2. 30Ć0. 10 0. 51Ć0. 05 C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product 5 0. 51Ć0. 10 1. 20 0Ć0. 10 5 0. 80Ć0. 10 5 .
The 2SB1182DX is designed for medium power amplifier application
9. 70Ć0. 20 0. 75Ć0. 10
5. 30Ć0. 10
2. 30Ć0. 10 0. 51Ć0. 05
C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
5
0. 51Ć0. 10 1. 20 0Ć0. 10 5 0. 80Ć0. 10 5
1. 60Ć0. 15
2. 30Ć0. 10
0. 60Ć 0. 10
0 Ć9 0. 51
B
O
C
E
2. 30Ć0. 10
* MAXIMUM RATINGS
* TA=25 C unless otherwise noted
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current -Pulse,Pw=100mS Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1182 |
Rohm |
Medium power Transistor |
|
| 2 | 2SB1182 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 3 | 2SB1182 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | 2SB1182 |
Kexin |
Medium Power Transistor |
|
| 5 | 2SB1182 |
Weitron |
PNP PLASTIC ENCAPSULATE TRANSISTORS |
|
| 6 | 2SB1182 |
UTC |
PNP TRANSISTOR |
|
| 7 | 2SB1182-P |
MCC |
PNP Transistor |
|
| 8 | 2SB1182-Q |
MCC |
PNP Transistor |
|
| 9 | 2SB1182-R |
MCC |
PNP Transistor |
|
| 10 | 2SB1182PT |
Chenmko Enterprise |
PNP Transistor |
|
| 11 | 2SB1180 |
Panasonic |
Silicon PNP Transistor |
|
| 12 | 2SB1180A |
Panasonic |
Silicon PNP Transistor |
|