2SB1182 - Weitron

2SB1182 PNP PLASTIC ENCAPSULATE TRANSISTORS

2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits.

Features

ition Frequency VCE=-5V, IC =-500mA, f=30MHz Output Capacitance VCB=-10V, I E =0, f=1.0MHz fT Cob 100 50 MHz pF CLASSIFICATION OF hFE(1) Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 WEITRON http://www.weitron.com.tw 2/5 30-Nov-07 Free Datasheet http://www.datasheet4u.com/ 2SB1182 Typical Characteristics VCE= −3V COLLECTOR CURRENT : IC (mA) −0.5 COLLECTOR CURRENT : IC (A) Ta=25°C −1000 Ta=100°C 25°C −500 −40°C −200 −100 −50 −20 −10 −5 −2 −1 −2.5mA −2.25mA −0.4 −2mA −1.75mA −1.5mA −1.25mA −0.3 −0.2 −1mA −750µA −500µA −0.1 0 −250µA 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8.