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·With TO-220F package ·Complement to type 2SD1589 ·DARLINGTON ·High DC current gain APPLICATIONS ·Low speed switching industrial use ·Low frequency power amplifier PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base volta.
voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-3A; IB=-3mA IC=-3A; IB=-3mA VCB=-100V ;IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-2V IC=-5A ; VCE=-2V 2000 500 MIN 2SB1098 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX -1.5 -2.0 -1 -3 15000 UNIT V V µA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A ;IB1=-IB2=-3mA RL=17>;VCC=-50V; 0.5 1 1 µs µs µs hFE-1 Classifications R 2000-5000 O 3000-7000 Y 5000-15000 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE .
2SB1098 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1090 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB1091 |
Hitachi Semiconductor |
PNP Transistor |
|
| 3 | 2SB1093 |
NEC |
PNP Transistor |
|
| 4 | 2SB1094 |
NEC |
PNP Transistor |
|
| 5 | 2SB1094 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1094 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1094 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 8 | 2SB1095 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | 2SB1096 |
ETC |
PNP Transistor |
|
| 10 | 2SB1096 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1096 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB1097 |
SavantIC |
SILICON POWER TRANSISTOR |
|