·High Collector Current:: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1585 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .
DITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -50mA; VCE= -5V hFE-2 DC Current Gain IC= -0.5A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V hFE-2 Classifications M L K 40-80 60-120 100-200 2SB1094 MIN TYP. MAX UNIT -1.5 V -2.0 V -10 μA -10 μA 20 40 200 70 pF 20 MHz NOTICE: ISC reserves.
of circuits, software and other related information in this document are provided for illustrative purposes in semicond.
·With TO-220Fa package ·Complement to type 2SD1585 APPLICATIONS ·Ideal for power supplies or variety or in audio and oth.
TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package. / Features 2SD1585 。 Complementary to the 2SD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1090 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
2 | 2SB1091 |
Hitachi Semiconductor |
PNP Transistor | |
3 | 2SB1093 |
NEC |
PNP Transistor | |
4 | 2SB1095 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
5 | 2SB1096 |
ETC |
PNP Transistor | |
6 | 2SB1096 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB1096 |
INCHANGE |
PNP Transistor | |
8 | 2SB1097 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1097 |
INCHANGE |
PNP Transistor | |
10 | 2SB1098 |
INCHANGE |
PNP Transistor | |
11 | 2SB1098 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1099 |
ETC |
Silicon PNP Transistor |