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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1068 TRANSISTOR (PNP) TO – 92 1. EMITTER FEATURES z Low Collector Saturation Voltage z High DC Current Gain z High Collector Power Dissipation z Complementary To The 2SD1513 NPN Transistor MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR 3. BASE Symbo.
z Low Collector Saturation Voltage z High DC Current Gain z High Collector Power Dissipation z Complementary To The 2SD1513 NPN Transistor MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR 3. BASE Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -20 -16 -6 -2 625 200 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Param.
2SB1068 - SeCoS
Elektronische Bauelemente 2SB1068 -2A , -20V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1061 |
Hitachi Semiconductor |
Silicon PNP Triple Diffused Type Transistor |
|
| 2 | 2SB1062 |
ETC |
Si PNP Epitaxial Plannar Transistor |
|
| 3 | 2SB1063 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SB1063 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1063 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1064 |
Rohm |
Epitaxial Planar PNP Silicon Transistor |
|
| 7 | 2SB1064 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1064 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1065 |
Rohm |
Epitaxial Planar PNP Silicon Transistor |
|
| 10 | 2SB1065 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB1065 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB1066M |
Rohm |
(2SB1066M / 2SB1243) Epitaxial Planar PNP Silicon Transistors |
|
