·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Coll.
DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz 20 40 20 MIN 2SB1063 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 20 170 MHz pF hFE-2 Classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1063 Fig.2 Outline dimensions (unindicated tolera.
·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·C.
Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD149.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1061 |
Hitachi Semiconductor |
Silicon PNP Triple Diffused Type Transistor | |
2 | 2SB1062 |
ETC |
Si PNP Epitaxial Plannar Transistor | |
3 | 2SB1064 |
Rohm |
Epitaxial Planar PNP Silicon Transistor | |
4 | 2SB1064 |
INCHANGE |
PNP Transistor | |
5 | 2SB1064 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SB1065 |
Rohm |
Epitaxial Planar PNP Silicon Transistor | |
7 | 2SB1065 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SB1065 |
INCHANGE |
PNP Transistor | |
9 | 2SB1066M |
Rohm |
(2SB1066M / 2SB1243) Epitaxial Planar PNP Silicon Transistors | |
10 | 2SB1067 |
Toshiba Semiconductor |
PNP Transistor | |
11 | 2SB1068 |
NEC |
PNP SILICON TRANSISTOR | |
12 | 2SB1068 |
SeCoS |
PNP Plastic Encapsulated Transistor |