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2SB1063 - SavantIC

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2SB1063 SILICON POWER TRANSISTOR

·With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Coll.

Features

DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz 20 40 20 MIN 2SB1063 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 20 170 MHz pF hFE-2 Classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1063 Fig.2 Outline dimensions (unindicated tolera.

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Datasheet 2SB1063 - INCHANGE 2SB1063

·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·C.

Datasheet 2SB1063 - Panasonic Semiconductor 2SB1063

Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD149.

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