·With TO-220 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA957 VCBO Collector-base voltage 2SA958 2SA957 VCEO Collector-emit.
; IE=0 -100 2SA958 VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.2A ; VCE=-12V 40 20 MHz -1.0 mA µA -200 -1.5 V CONDITIONS MIN -150 V TYP. MAX UNIT SYMBOL VCEO(BR) Collector-emitter breakdown voltage VCEsat Collector-emitter saturation voltage 2SA957 ICBO Collector cut-off current IEBO hFE fT Emitter cut-off current DC current gain Transition frequency Switching times resistive load tr ts tf Rise time Storage time Fall time IC=-1.0A IB1=- IB2=-0.1A RL=20B;VCC=-20V 0.4 1.5 0.5 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power T.
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for ro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA950 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SA950 |
SeCoS |
PNP Transistor | |
3 | 2SA950 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors | |
4 | 2SA950 |
SEMTECH |
PNP Transistor | |
5 | 2SA950 |
KOO CHIN |
PNP Transistor | |
6 | 2SA950 |
DC COMPONENTS |
PNP Transistor | |
7 | 2SA950 |
Bluecolour |
PNP Silicon Transistor | |
8 | 2SA950 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
9 | 2SA952 |
NEC |
PNP SILICON TRANSISTOR | |
10 | 2SA952 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
11 | 2SA952 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor | |
12 | 2SA953 |
LZG |
SILICON PNP TRANSISTOR |