2SA957 Inchange Semiconductor POWER TRANSISTOR Datasheet, en stock, prix

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2SA957

Inchange Semiconductor
2SA957
2SA957 2SA957
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Part Number 2SA957
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for gener...
Features or Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -0.7A; VCE= -10V fT Current-Gain—Bandwidth Product IE= 0.2A; VCE= -12V Switching times tr Rise Time tstg Storage Time tf Fall Time IC= -1A, RL= 20Ω, IB1= -IB2= -0.1A, VCC= -20V 2SA957 MIN TYP. MAX UNIT -150 V -1.5 V -100 μA -1.0 mA 40 20 MHz 0.4 μs 1.5 μs 0.5 μs Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicatio...

Document Datasheet 2SA957 Data Sheet
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