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2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications Unit: mm • • • High breakdown voltage: VCEO = −150 V Low output capacitance: Cob = 4.0 pF (typ.) High transition frequency: fT = 120 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base .
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Free Datasheet http://www.Datasheet4U.com 2SA949 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA940 |
Toshiba |
Silicon PNP Transistor |
|
| 2 | 2SA940 |
NJS |
Silicon PNP Power Transistor |
|
| 3 | 2SA940 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | 2SA940 |
TRANSYS |
Transistors |
|
| 5 | 2SA940 |
Thinki Semiconductor |
PNP Silicon Epitaxial Power Transistor |
|
| 6 | 2SA940 |
LGE |
PNP Transistor |
|
| 7 | 2SA940 |
GME |
Epitaxial Planar PNP Transistor |
|
| 8 | 2SA940 |
UTC |
PNP TRANSISTORS |
|
| 9 | 2SA940A |
Toshiba Semiconductor |
TRANSISTOR |
|
| 10 | 2SA940A |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 11 | 2SA941 |
ETC |
PNP Transistor |
|
| 12 | 2SA942 |
ETC |
PNP Transistor |
|