2SA940A - Toshiba Semiconductor

2SA940A TRANSISTOR

2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT Process) 2SA940A Power Amplifier Applications Vertical Output Applications Unit: mm • Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation.

Features

−10 V, IC = −500 mA VCE = −10 V, IC = −500 mA VCB = −10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― 40 ― −0.65 ― ― ― ― 75 ― −0.75 4 55 −10 −10 140 −1.5 −0.85 ― ― µA µA V V MHz pF Marking A940A Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 Collector current IC (A) −2.0 −1.6 −150 −100 −1.2 −0.8 −0.4 IC
  – VCE Common emitter Tc = 25°C −50 −40 −30 −20 −15 −10 IB = −5 mA 0 0 0 −4 −8 −12 −16 −20 Collector-emitter voltage VCE (V) Collector dissipation PC (W) 2SA940A 32 (1) 24 16 (2) (3) 8 (4) (5) 0 0 PC
  – Ta .