2SA882 Silicon POwer Transistors Datasheet

2SA882 Silicon POwer Transistors

·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·For power and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curre.

Features

or-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA ;IB=0 IC=-3A; IB=-0.3A IC=-7A ;IB=-1.5A IC=-3A ; VCE=-4V VCE=-130V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 40 20 MIN -130 TYP. 2SA882 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBE ICBO IEBO hFE-1 hFE-2 MAX UNIT V -1.0 -3.0 -1.6 -0.1 -0.1 V V V mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA882 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) .

The same part from a different manufacturer

2SA882 - Inchange Semiconductor

·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum .

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2SA882 - SavantIC