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2SA882 |
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| Part Number | 2SA882 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
tor-Emitter Saturation Voltage IC= -7A; IB= -1.5A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -130V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
2SA882
MIN TYP. MAX UNIT
-130
V
-1.0 V
-3.0 V
-1.6 V
-0.1 mA
-0.1 mA
40
20
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC produ... |
| Document |
 2SA882 Data Sheet
PDF 192.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA880 |
Panasonic Semiconductor |
SI PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | 2SA881 |
Rohm |
(2SA1560 / 2SA881) Epitaxial Planar PNP Silicon Transistors |
|
| 3 | 2SA882 |
SavantIC |
Silicon POwer Transistors |
|
| 4 | 2SA885 |
SavantIC |
Silicon POwer Transistors |
|
| 5 | 2SA885 |
Inchange Semiconductor |
POWER TRANSISTOR |
|