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·With TO-220 package ·Complement to type 2SC1669 ·High breakdown voltage APPLICATIONS ·Audio power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PAR.
lector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ,IB=0 IE=-1mA ,IC=0 IC=-0.5A; IB=-50mA IC=-0.5A ; VCE=-10V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IC=-1A ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 40 20 MIN -150 -5 2SA839 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V -1.5 -1.0 -20 -10 240 V V µA µA 100 6 pF MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semic.
2SA839 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-240@ IC= -0.5A ·Complement to Typ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA830 |
ROHM |
PNP Transistor |
|
| 2 | 2SA830S |
Rohm |
High-gain Amplifier Transistor |
|
| 3 | 2SA831 |
ROHM |
PNP Transistor |
|
| 4 | 2SA836 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 5 | 2SA836 |
Renesas |
Silicon PNP Transistor |
|
| 6 | 2SA837 |
SavantIC |
Silicon POwer Transistors |
|
| 7 | 2SA837 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA838 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 9 | 2SA838 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | 2SA838 |
LZG |
SILICON PNP TRANSISTOR |
|
| 11 | 2SA807 |
SavantIC |
Silicon POwer Transistors |
|
| 12 | 2SA807 |
Inchange Semiconductor |
POWER TRANSISTOR |
|