2SA777 - Panasonic Semiconductor

2SA777 Silicon NPN Transistor

Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 5.9± 0.2 4.9± 0.2 q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCB.

Features

0.45
  –0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
* Conditions VCB =
  –20V, IE = 0 IC =
  –10µA, IE = 0 IC =
  –100µA, IB = 0 IE =
  –10µA, IC = 0 VCE =
  –10V, IC =
  –150mA VCE =
  –5V, IC =
  –500mA IC =
  –300mA, IB =
  –30mA IC =
  –300mA, IB =
  –30mA VCB =
  –10V, IE = 50m.