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·With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA770 VCBO Collector-base voltage.
A VCB=-60V; IE=0 CONDITIONS 2SA770 2SA771 SYMBOL MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.0 V VCEsat Collector-emitter saturation voltage 2SA770 2SA771 ICBO Collector cut-off current -1.0 VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-12V 40 10 -1.0 mA IEBO hFE fT Emitter cut-off current DC current gain Transition frequency mA MHz Switching times tr tstg tf Rise time Storage time Fall time IC=-3A ; VCC=-9V IB1=-IB2=-0.4A;RL=3C 0.9 1.0 0.1 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon.
2SA771 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -80(V)(Min.) ·Complement to Type 2SC1986 ·Minimum Lot-to-Lot variations.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA770 |
SavantIC |
(2SA770 / 2SA771) Silicon POwer Transistors |
|
| 2 | 2SA770 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA775 |
SavantIC |
Silicon POwer Transistors |
|
| 4 | 2SA775 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA777 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SA778 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 7 | 2SA778 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 8 | 2SA778 |
Renesas |
Silicon PNP Transistor |
|
| 9 | 2SA778A |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SA778A |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 11 | 2SA778A |
Renesas |
Silicon PNP Transistor |
|
| 12 | 2SA778AK |
Hitachi Semiconductor |
Silicon PNP Transistor |
|