2SA743 - Hitachi Semiconductor

2SA743 Silicon PNP Transistor

2SA743, 2SA743A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipat.

Features

— Max — — —
  –20 — 200 — 2SA743A Min
  –80
  –80
  –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — —
  –20 200 — V V MHz Unit V V V µA Test conditions I C =
  –1 mA, IE = 0 I C =
  –10 mA, RBE = ∞ I E =
  –1 mA, IC = 0 VCE =
  –50 V, RBE = 1 kΩ VCE =
  –80 V, RBE = 1 kΩ VCE =
  –4 V, IC =
  –50 mA VCE =
  –4 V, IC =
  –1 A (pulse) VCE =
  –4 V, IC =
  –50 mA I C =
  –1 A, IB =
  –0.1 A VCE =
  –4 V, IC =
  –30 mA
  –0.65
  –1.0
  –0.75
  –1.5 120 —
  –0.65 1.0
  –0.75
  –1.5 120 — Gain bandwidth product f T Note: B 60 to 120 1. The 2SA743 and 2SA743A is grouped by hFE as follows. C 100 to 200 2 2SA743, 2SA743A Maximum Collector Dissipatio.