2SA740 - INCHANGE

2SA740 PNP Transistor

·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complementary to Type 2SC1448 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .

Features

Breakdown Voltage IC= -10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -10V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.5A ; VCE= -10V COB Output Capacitance IE= -0; VCB= -10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V MIN TYP. MAX UNIT -150 V -150 V -5 V -1.5 V -1.0 V.