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2SA715 - Hitachi Semiconductor

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2SA715 Silicon PNP Transistor

2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Sym.

Features

Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE
* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT 60 20 — — — V V MHz VCE =
  –2 V, IC =
  –1.5 A (Pulse test) I C =
  –2 A, IB =
  –0.2 A (Pulse test) VCE =
  –2 V, IC =
  –0.2 A (Pulse test) 1. The 2SA715 is grouped by hFE as follows. C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve 0.8 Collector power dissipation Pc (W)
  –5 Area of Safe Operation TC = 25°C 0.6 Collector current IC (A) (
  –4 V,
  –2.5 A)
  –2 IC max(DC Operation) PC =
  –1.0
  –0..

The same part from a different manufacturer

Datasheet 2SA715 - BLUE ROCKET ELECTRONICS 2SA715

TO-126 PNP 。Silicon PNP transistor in a TO-126 Plastic Package.  / Features 2SC1162 。 Complementary pair with 2S.

Datasheet 2SA715 - SavantIC 2SA715

·With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN 1 .

Datasheet 2SA715 - INCHANGE 2SA715

·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -35V (Min) ·Complement to Type 2SC1162 ·Minimum L.

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