·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For power amplifier and power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter.
akdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V -150 V Collector-base breakdown voltage -150 V Emitter-base breakdown voltage -6 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -2.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 60 320 Transition frequency 8 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA714 Fig.2 out.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variation.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA715 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
2 | 2SA715 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
3 | 2SA715 |
SavantIC |
Silicon POwer Transistors | |
4 | 2SA715 |
INCHANGE |
PNP Transistor | |
5 | 2SA715F |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
6 | 2SA719 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
7 | 2SA719 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
8 | 2SA719 |
SeCoS |
PNP Transistor | |
9 | 2SA719 |
LGE |
Bipolar Transistors | |
10 | 2SA719 |
JCET |
PNP Transistor | |
11 | 2SA719 |
LZG |
SILICON PNP TRANSISTOR | |
12 | 2SA700 |
INCHANGE |
PNP Transistor |