·With TO-3 package ·Complement to type 2SC1079/1080 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SA679 VCBO Collector-base voltage 2SA680 2SA679 VCEO Collector-emitter vol.
V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V; f=1.0MHz IC=-2A ; VCE=-5V CONDITIONS 2SA679 2SA680 SYMBOL MIN -120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -100 -5 -3.0 -2.5 -0.1 -0.1 40 15 900 6 pF MHz 140 V V V mA mA V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency hFE-1 Classifications R 40-80 Y 70-140 2 SavantIC .
·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Compleme.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA683 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SA683 |
SEMTECH |
PNP Transistor | |
3 | 2SA683 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA683 |
CHINA BASE |
PNP Silicon Epitaxial Planar Transistor | |
5 | 2SA683 |
JCET |
PNP Transistor | |
6 | 2SA684 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
7 | 2SA684 |
Unisonic Technologies |
PNP EPITAXIAL PLANAR TRANSISTOR | |
8 | 2SA684 |
SEMTECH |
PNP Transistor | |
9 | 2SA684 |
MCC |
PNP Transistor | |
10 | 2SA684 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
11 | 2SA603 |
ETC |
PNP SILICON EPITAXIAL TRANSISTOR | |
12 | 2SA606 |
ETC |
PNP/NPN Transistor |